01/99 b-61 j308, j309 n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 25 v continuous forward gate current 10 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount SMPJ308, smpj309 at 25c free air temperature: j308 j309 process nj72 static electrical characteristics min typ max min typ max unit test conditions gate source breakdown voltage v (br)gss C 25 C 25 v i g = C 1a, v ds = ? v gate reverse current i gss C 1 C 1 na v gs = C 15 v, v ds = ? v C 1 C 1 a v gs = C 15 v, v ds = ? v t a = +125c gate source cutoff voltage v gs(off) C 1 C 6.5 C 1 C 4 v v ds = 10 v, i d = 1 na gate source forward voltage v gs(f) 11vv ds = ? v, i g = 1 ma drain saturation current (pulsed) i dss 12 60 12 30 ma v ds = 10 v, v gs = ? v dynamic electrical characteristics common source forward transconductance g fs 8000 17000 10000 17000 s v ds = 10 v, i d = 10 ma f = 1 khz common source output conductance g os 250 250 s v ds = 10 v, i d = 10 ma f = 1 khz common gate forward transconductance g fg 13000 13000 s v ds = 10 v, i d = 10 ma f = 1 khz common gate output transconductance g og 150 100 s v ds = 10 v, i d = 10 ma f = 1 khz gate drain capacitance c dg 1.8 2.5 1.8 2.5 pf v ds = ? v, v gs = C 10 v f = 1 mhz gate source capacitance c gs 45 45pfv ds = ? v, v gs = C 10 v f = 1 mhz equivalent short circuit e n 10 10 nv/ hz v ds = 10 v, i d = 10 ma f = 100 khz input noise voltage common source forward re (yfs) 12 12 s v ds = 10 v, i d = 10 ma f = 105 mhz transconductance common gate input conductance re (yig) 14 14 s v ds = 10 v, i d = 10 ma f = 105 mhz common source input conductance re (yis) 0.4 0.4 s v ds = 10 v, i d = 10 ma f = 105 mhz common source output conductance re (gos) 0.15 0.15 s v ds = 10 v, i d = 10 ma f = 105 mhz common gate power gain g pg 16 16 db v ds = 10 v, i d = 10 ma f = 105 mhz at noise match 11 11 db v ds = 10 v, i d = 10 ma f = 450 mhz noise figure nf 1.5 1.5 db v ds = 15 v, i d = 10 ma f = 105 mhz 2.7 2.7 db v ds = 15 v, i d = 10 ma f = 450 mhz mixers oscillators vhf/uhf amplifiers 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-61
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